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2SK1317
Silicon N Channel MOS FET
REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D 1. Gate 2. Drain (Flange) 3. Source
G
1
S 2 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 1500 20 2.5 7 2.5 100 150 -55 to +150
Unit V V A A A W
*2
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 -- -- 2.0 -- 0.45 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 9 0.75 990 125 60 17 70 110 60 0.9 1750 Max -- 1 500 4.0 12 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns IF = 2 A, VGS = 0 IF = 2 A, VGS = 0, diF/dt = 100 A/s Test conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 2 A, VGS = 15 V * ID = 1 A, VDS = 20 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 2 A, VGS = 10 V, RL = 15
3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1317
Main Characteristics
Power vs. Temperature Derating
120
Maximum Safe Operation Area
10 3
D
Channel Dissipation Pch (W)
10
PW
C O pe
10
0 s
s
Drain Current ID (A)
=
ra
1
10
tio
m
(1
=
80
1.0 0.3 0.1 0.03 0.01 10
s
Sh
25
m
s
C
n
(T
ot
)
)
40
C
Operation in this area is limited by RDS (on)
Ta = 25C
0 50 100 150
30
100
300
1,000 3,000 10,000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5 Pulse Test 15 V 2.0 10 V 8V 7V 3 6V
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
4
1.6
VDS = 20 V Pulse Test
1.2
2
0.8
75C TC = 25C -25C
1
5V VGS = 4 V
0.4
0
20
40
60
80
100
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
50 Pulse Test 40 ID = 3 A 30 2A 1A 0.5 A 0 4 8 12 16 20
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50 20 10 5
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance RDS (on) ()
VGS = 10 V 15 V
20
2 1.0 0.5 0.1 Pulse Test
10
0.2
0.5
1.0
2
5
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1317
Static Drain to Source on State Resistance vs. Temperature
20 ID = 2 A 16 VGS = 15 V Pulse Test 0.5 A, 1 A
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
10 5 VDS = 20 V Pulse Test
12
2 1.0 0.5
-25C Ta = 25C 75C
8
4
0.2 0.1 0.05 0.1
0 -40
0
40
80
120
160
0.2
0.5
1.0
2
5
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
5,000 10,000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time t rr (ns)
Capacitance C (pF)
2,000
1,000 500 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test
1,000
Ciss
200 100 50 0.05
100
Coss Crss
10 0.1 0.2 0.5 1.0 2 5 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
1,000
Switching Characteristics
20 1,000
Drain to Source Voltage VDS (A)
Gate to Source Voltage VGS (V)
Switching Time t (ns)
800
VDD = 250 V 400 V 600 V VGS VDS
16
500
VGS = 10 V VDD = 30 V PW = 2 s, duty < 1%
*
*
td (off) 200 100 tf 50 tr td (on)
600
12 8
400 VDD = 600 V 200 400 V 250 V 20 40 60
4 ID = 2.5 A 0 80 100
20 10 0.05
0
0.1
0.2
0.5
1.0
2
5
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1317
Reverse Drain Current vs. Source to Drain Voltage
5
Reverse Drain Current IDR (A)
4
Pulse Test
3
2
1
10 V, 15 V VGS = 0, -5 V
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2
0.1 0.05
ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T
0.02
0.03
0.01 Pulse hot 1S
T 1m 10 m 100 m
0.01 10
100
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor
Vin 10%
Waveforms
90%
D.U.T
RL
50 Vin 10 V
VDD = 30 V
Vout
10% 90% 90% td (off)
10%
td (on)
tr
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1317
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1317-E 360 pcs Quantity Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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